features complement to ksc2859 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -35 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.5 a p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -35 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-35v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a h fe(1) v ce =-1v, i c =-100ma 70 240 dc current gain h fe(2) v ce =-6v, i c =-400ma 25 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma -0.25 v base-emitter voltage v be v ce =-1v, i c =-100ma -1.0 v transition frequency f t v ce =-6v, i c =-20ma 200 mhz collector output capacitance c ob v cb =-6v, i e =0, f=1mhz 13 pf classification of h fe(1) rank o y range 70-140 120-240 marking f1o f1y sot-23 1. base 2. emitter 3. collector KSA1182 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
KSA1182 typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu
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